Experimental semiconductor physics · 1902–1987
Walter Houser Brattain
Brattain was an experimental physicist at Bell Labs who worked with Bardeen on semiconductor surfaces. Their germanium device achieved amplification in 1947, an essential step toward practical solid-state electronics. In his Nobel lecture, Brattain explicitly described himself as representing a wider community and credited colleagues who prepared the materials, discovered junction behavior, and built the field’s experimental foundations.
Contribution & context
He helped turn a problem about surfaces into a working point-contact amplifier. His acknowledgment of metallurgists Scaff and Theuerer makes material preparation part of the discovery story, not invisible background.
Walter H. Brattain: FactsWalter H. Brattain: Surface Properties of Semiconductors (1956)
Discoveries in context
Before Silicon Valley, a germanium amplifier ↗
The first working transistor joined quantum ideas, surface experiments, purified germanium, and a team trying to improve telecommunications.
Sources & further reading
- Walter H. Brattain: Facts ↗Nobel Prize OutreachHistorical account · Source checked
- Walter H. Brattain: Surface Properties of Semiconductors (1956) ↗Nobel Prize OutreachOriginal research · Source checked Where to look: Opening acknowledgments, especially the paragraph crediting Ohl, Scaff and Theuerer.Acknowledgment checked in indexed NobelPrize.org text; PDF pagination is unverified.
Sources and further reading. What the review labels mean